Vapor deposition apparatus, deposition method, and method of manufacturing organic light-emitting display apparatus by using the same

ABSTRACT

Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2013-0016977, filed on Feb. 18, 2013, in the KoreanIntellectual Property Office, the disclosure of which is incorporatedherein in its entirety by reference.

BACKGROUND

1. Field

Embodiments of the present invention relate to a vapor depositionapparatus and a method of manufacturing an organic light-emittingdisplay apparatus.

2. Description of the Related Art

A semiconductor device, a display apparatus, and other electronicdevices include a plurality of thin films. There are various methods offorming such a plurality of thin films. One of such various methods is avapor deposition method.

The vapor deposition method employs one or more gases as a raw materialfor forming a thin film. The vapor deposition method includes variousmethods such as chemical vapor deposition (CVD) or atomic layerdeposition (ALD).

With regard to the ALD method, one raw material is injected andpurged/pumped. Then, a single molecular layer or a multiple molecularlayer is adsorbed onto a substrate. Then, another raw material isinjected and purged/pumped. Thus, a desired single atomic layer isformed or multiple atomic layers are formed.

An organic light-emitting display apparatus, as compared to other typesof display apparatuses, provides a rapid response, as well as a wideview angle and an excellent contrast. Thus, the organic light-emittingdisplay apparatus is drawing attention as a next-generation displayapparatus.

The organic light-emitting display apparatus includes an intermediatelayer having an organic light-emitting layer between a first electrodeand a second electrode which face each other, and further includes oneor more various thin films. A deposition process may be used in order toform the one or more thin films in the organic light-emitting displayapparatus.

However, as the size of the organic light-emitting display apparatusincreases, it becomes more difficult to deposit large-sized thin filmswhile maintaining desired characteristics such as high resolution.Additionally, there is a limit on improving an efficiency of a processof forming such thin films.

SUMMARY

One or more embodiments of the present invention provide a vapordeposition apparatus for efficiently preventing or substantiallypreventing contamination of a deposition space and improvingcharacteristics of a deposition layer, a deposition method, and a methodof manufacturing an organic light-emitting display apparatus.

According to an aspect of the present invention, there is provided avapor deposition apparatus for forming a deposition layer on asubstrate, the vapor deposition apparatus including: a plasma generatorconfigured to change at least a portion of a first raw material gas intoa radical form; a corresponding surface corresponding to the plasmagenerator; a reaction space between the plasma generator and thecorresponding surface; and an insulating member separated from, andsurrounding the plasma generator.

The insulating member may be separated from the plasma generator by aninserting member located between the plasma generator and the insulatingmember.

A space between the plasma generator and the insulating member may besubstantially sealed by the inserting member.

The inserting member may include a first inserting member adjacent oneend of the plasma generator, and a second inserting member adjacent anopposing end of the plasma generator, and wherein a space between thefirst inserting member and the second inserting member, between theplasma generator and the insulating member, may be substantially sealedby the first inserting member and the second inserting member.

The inserting member may have elasticity.

The inserting member may be an O-ring.

The plasma generator may be an electrode.

The plasma generator may have a generally column shape.

The insulating member may be a hollow column.

The insulating member may include a quartz or ceramic material.

The insulating member may surround an entire external surface of theplasma generator.

A first injector may be coupled to the reaction space and configured toinject a deposition raw material onto the substrate, the deposition rawmaterial including a radical form of the first raw material gas.

A connection unit may be between the reaction space and the firstinjector, the connection unit having a narrower width than the firstinjector.

A second injector may be adjacent the first injector, the secondinjector being separated from the first injector.

The second injector may be configured to inject a second raw material ora purge gas toward a direction of the substrate for forming thedeposition layer.

A second injector and a third injector may be adjacent to and separatedfrom the first injector, and respectively on opposing sides of the firstinjector.

The second injector and the third injector may be respectivelyconfigured to inject one selected from the group consisting of a purgegas, a second raw material, and a third raw material, in a directiontoward the substrate.

A plurality of exhausts may be adjacent to each of the first injector,the second injector, and the third injector.

The plurality of exhausts may include a first exhaust between the firstinjector and the second injector, and a second exhaust between the firstinjector and the third injector.

The substrate and the vapor deposition apparatus may be configured tomove with respect to each other.

According to another embodiment of the present invention, there isprovided a vapor deposition apparatus for forming a deposition layer ona substrate, the vapor deposition apparatus including: a plurality offirst regions, a plurality of second regions, and a plurality of purgeunits, wherein each of the plurality of first regions includes: a plasmagenerator configured to change at least a portion of a first rawmaterial gas into a radical form; a surface corresponding to the plasmagenerator; a reaction space between the plasma generator and thecorresponding surface; and an insulating member separated from, andsurrounding the plasma generator; wherein each of the plurality ofsecond regions is configured to inject a second raw material in adirection toward the substrate; and wherein the purge units areconfigured to inject a purge gas in a direction toward the substrate.

Each purge unit, among the plurality of purge units, may be between thefirst region and the second region.

A plurality of exhaust units may be adjacent the first regions, thesecond regions, and the purge units.

According to another aspect of the present invention, there is provideda method of forming a deposition layer on a substrate, the methodincluding: supplying a first raw material gas from a supply unit to areaction space; changing at least a portion of the first raw materialgas into a radical form, by generating a plasma using a plasma generatorin the reaction space; and injecting a first raw depositing materialonto the substrate, the first raw depositing material including aradical form, wherein the changing of at least a portion of the firstraw material gas into a radical form includes substantially preventingelectrons or ions, which are generated when the plasma is generated,from accelerating and colliding with the plasma generator using aninsulating member separate from and surrounding the plasma generator.

The substrate and the vapor deposition apparatus may be configured tomove with respect to each other and execute a deposition process.

According to another aspect of the present invention, there is provideda method of manufacturing an organic light-emitting display apparatus byusing a vapor deposition apparatus, wherein the organic light-emittingdisplay apparatus includes a first electrode, an intermediate layerwhich includes an organic light-emitting layer, a second electrode, andan encapsulation layer, wherein forming at least one thin film of theorganic light-emitting display apparatus includes: positioning asubstrate to correspond to the vapor deposition apparatus; supplying afirst raw material gas from a supply unit of the vapor depositionapparatus to a reaction space; changing at least a portion of the firstraw material gas into a radical form, by generating a plasma using aplasma generator in the reaction space; and injecting a first rawdepositing material into the substrate, the first raw depositingmaterial including a radical form, wherein the changing at least aportion of the first raw material gas into a radical form includessubstantially preventing electrons or ions, which are generated when theplasma is generated, from accelerating and colliding with the plasmagenerator using an insulating member separated from and surrounding theplasma generator.

The forming of the thin film of the organic light-emitting display mayinclude forming the encapsulation layer on the second electrode.

The forming of the thin film of the organic light-emitting display mayinclude forming an insulating layer.

The forming of the thin film of the organic light-emitting display mayinclude forming a conductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and aspects of the present invention willbecome more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a schematic diagram illustrating a vapor deposition apparatus,according to an embodiment of the present invention;

FIG. 2 is an exploded oblique view illustrating a plasma generation unitand an insulating member of FIG. 1;

FIG. 3 is a cross-sectional view of the vapor deposition apparatus takenalong the line III-III of FIG. 1;

FIG. 4 is a schematic plan view illustrating a vapor depositionapparatus, according to another embodiment of the present invention;

FIG. 5 is a schematic plan view illustrating a vapor depositionapparatus, according to another embodiment of the present invention;

FIG. 6 is a schematic plan view illustrating a vapor depositionapparatus, according to another embodiment of the present invention;

FIG. 7 is a schematic cross-sectional view illustrating an organiclight-emitting display apparatus which is manufactured by using a methodof manufacturing an organic light-emitting display apparatus, accordingto an embodiment of the present invention; and

FIG. 8 is an expanded view of a portion F of FIG. 7.

DETAILED DESCRIPTION

Hereinafter, the present invention will be described in detail byexplaining embodiments of the invention with reference to the attacheddrawings.

FIG. 1 is a schematic diagram illustrating a vapor deposition apparatus,according to an embodiment of the present invention. FIG. 2 is anexploded oblique view illustrating a plasma generation unit and aninsulating member of FIG. 1. FIG. 3 is a cross-sectional view of thevapor deposition apparatus taken along the line of FIG. 1

Referring to FIGS. 1 through 3, the vapor deposition apparatus 100includes a housing 101, a supply unit (not illustrated), a plasmageneration unit (or plasma generator) 111, a corresponding surface 115,a reaction space 103, an insulating member 120, and an injection unit(or injector) 142.

The housing 101 is formed of a durable material so as to maintain theentire shape and appearance of the vapor deposition apparatus 100. Thehousing 101 may be formed in a shape similar to a rectangularparallelepiped. However, this is only an example, and the housing 101may be formed in various shapes.

The supply unit (not illustrated) is coupled to the housing 101. Forexample, the supply unit may be formed on an upper surface of thehousing 101, and may have a shape of a through hole so that one or moreraw material gases may be supplied. The number of the supply unit (notillustrated) may be determined variously according to a size of adeposition target on which a deposition process is to be performed.

The plasma generation unit 111 is located inside the housing 101. Theplasma generation unit 111 may be an electrode to which a voltage isapplied. Additionally, a terminal unit, which has a protruding shape,may be formed at both sides of the plasma generation unit 111, asillustrated in FIGS. 2 and 3. However, the present invention is notlimited thereto, and the terminal unit may not be provided.

The plasma generation unit 111 may have a form of a column.Alternatively, the plasma generation unit 111 may have a form such as acylinder.

The corresponding surface 115 is a surface which corresponds to theplasma generation unit 111. Additionally, the corresponding surface 115may be an electrode which corresponds to the plasma generation unit 111.For example, the corresponding surface 115 may be a ground electrode.

Thus, a plasma is generated from a space between the plasma generationunit 111 and the corresponding surface 115 that is the reaction space103. The reaction space 103 will be described later. A raw material gas,which flows through the supply unit (not illustrated), is changed into aradical form in the reaction space 103 between the plasma generationunit 111 and the corresponding surface 115. Thus, depositioncharacteristics of the raw material gas are improved.

The reaction space 103 is defined as a space (e.g., a predeterminedspace) inside the housing 101. Specifically, the reaction space 103 is aspace between the plasma generation unit 111 and the correspondingsurface 115. The reaction space 103 may be coupled to the supply unit(not illustrated) which is described above. Thus, a raw material gas maybe changed into a radical form in the reaction space 103.

The insulating member 120 surrounds the plasma generation unit 111. Thatis, the insulating member 120 is located in the reaction space 103, toseparate the plasma generation unit 111 from the corresponding surface115. Additionally, the insulating member 120 may have a form or shape ofa hollow column to surround the plasma generation unit 111. For example,the insulating member 120 may have a form of a hollow cylinder tocorrespond to the plasma generation unit 111. The insulating member 120is formed of a quartz or ceramic material. For example, the insulatingmember 120 may contain an aluminum oxide such as alumina (Al₂O₃).

Additionally, the insulating member 120 may correspond to or surround(e.g., cover) an entire external surface around the circumference orperiphery of the plasma generation unit 111. That is, a length of theinsulating member 120 may correspond to or be greater than a length ofthe plasma generation unit 111.

The insulating member 120 surrounds, but does not contact, the plasmageneration unit 111. To achieve this, an inserting member 130 ispositioned between the insulating member 120 and the plasma generationunit 111.

The inserting member 130 is formed of an elastic material. The insertingmember 130 may be an O-ring. The inserting member 130 includes a firstinserting member 131 and a second inserting member 132. The firstinserting member 131 is adjacent to one end of the plasma generationunit 111, and the second inserting member 132 is adjacent to another endof the plasma generation unit 111. Thus, an enclosed space is formedbetween the plasma member 111 and the insulating member 120.

The injection unit 142 is formed to be coupled to the reaction space103. The raw material gas, which flows from the supply unit (notillustrated), is changed into a radical form in the reaction space 103,and transmitted to the injection unit 142. Then, the raw material gasreacts with a deposition target at the injection unit 142, and thus, adeposition process is performed on a surface of the deposition target.The injection unit 142 is coupled to the reaction space 103 by using aconnection unit or connector 141. The connection unit 141 may have anarrower width than the injection unit 142 and the reaction space 143.

Thus, the raw material gas is induced to remain for a sufficiently longtime in the reaction space 103, so that an amount of the raw materialgas, changed into a radical form, may increase. Thus, the raw materialof deposition may be effectively transmitted to the injection unit 142.

A method of deposition, by using the vapor deposition apparatus 100 inthe current embodiment, is briefly described.

When a substrate S, which is a deposition target, corresponds to (e.g.,is positioned within a suitable distance relative to) the injection unit142 of the vapor deposition apparatus 100, a deposition process may beperformed on the substrate S. Then, the substrate S and the vapordeposition apparatus 100 may move with respect to each other, and toperform the deposition process. That is, the substrate S may move in anX direction shown in FIG. 1, and a deposition process is consecutivelyperformed. Conversely, the vapor deposition apparatus 100 may move and adeposition process is performed. Additionally, the present invention isnot limited thereto, and the substrate S may be fixed to the vapordeposition apparatus 100, and a deposition process is performed.

First, through the supply unit (not illustrated), one or more rawmaterial gases flows into the reaction space 103. Then, a plasma isgenerated from or within the reaction space 103 between the plasmageneration unit 111 and the corresponding surface 115. At least aportion of the raw material gases, which flows into the reaction space103, is changed into a radical form. The raw material in the radicalform reaches the substrate 5, and thus, a deposition layer whichincludes the raw material is formed.

Ions and electrons, generated when the plasma is generated, mayaccelerate and collide with the plasma generation unit 111. In such acase, particles may be generated from a surface of the plasma generationunit 111, and thus, the plasma generation unit 111 may be damaged.Additionally, such particles may contaminate a deposition layer.However, in the current embodiment, the insulating member 120 surroundsthe plasma generation unit 111, so as to prevent the accelerating ionsand electrons from colliding with the surface of the plasma generationunit 111, and thus, prevent generation of particles. For example, theinserting member, such as an O-ring, is located between the insulatingmember 120 and the plasma generation unit 111, so as to enclose a spacebetween the insulating member 120 and the plasma generation unit 111.Thus, accelerating ions and electrons may be completely prevented fromcolliding with the plasma generation unit 111.

Additionally, the plasma generation unit 111 and the insulating member120 are separated from each other, so that generation of additionalparticles from the insulating member 120 is prevented or substantiallyprevented. That is, if the plasma generation unit 111 and the insulatingmember 120 contact each other, heat generated from the plasma generationunit 111 may increase phonon in the insulating member 120, and thus,high heat is generated on the insulating member 120. Additionally, suchhigh heat may cause particles from a surface of the insulating member120 to be generated. However, in the current embodiment, the plasmageneration unit 111 and the insulating member 120 are separated fromeach other, and thus, transmission of the heat, generated from theplasma generation unit 111, to the insulating member 120 is effectivelyprevented or substantially prevented. Therefore, generation ofadditional particles may be effectively prevented or substantiallyprevented.

As such, the vapor deposition apparatus 100, in the current embodiment,may relatively easily form a high-purity deposition layer by keepinginside of the reaction space 103 uncontaminated or substantiallyuncontaminated.

FIG. 4 is a schematic plan view illustrating a vapor depositionapparatus, according to another embodiment of the present invention.

Referring to FIG. 4, a vapor deposition apparatus 200 includes a housing201, a supply unit (not illustrated), a plasma generation unit (orplasma generator) 211, a corresponding surface 215, a reaction space203, an insulating member 220, a first injection unit (or firstinjector) 242, and a second injection unit (or second injector) 250.

The housing 201 is formed of a durable material so as to maintain anentire shape and appearance of the vapor deposition apparatus 200. Thehousing 201 may be formed in a shape similar to a rectangularparallelepiped. However, this is only an example, and the housing 201may be formed in various shapes.

The supply unit (not illustrated) is located on an upper portion of thehousing 201. The supply unit has a shape of a through hole, so as tosupply a first raw material gas into the reaction space 203, and asecond raw material gas into the second injection unit 250. The numberof supply units (not illustrated) may be determined variously accordingto a size of a deposition target on which a deposition process is to beexecuted.

The plasma generation unit 211 is located inside the housing 201. Theplasma generation unit 211 may have be an electrode to which a voltageis applied. The reaction space 203 is defined as a space (e.g., apredetermined space) inside the housing 201. Specifically, the reactionspace 203 is a space between the corresponding surface 215 and theplasma generation unit 211. An insulating member 220 surrounds theplasma generation unit 211, but does not contact the plasma generationunit 211. To achieve this, an inserting member 230 is located betweenthe insulating member 220 and the plasma generation unit 211. Theinserting member 230 is formed of an elastic material. For example, theinserting member 230 may be an O-ring. Similar to the embodiment shownin FIGS. 1-3, the inserting member 230 may include a first insertingmember and a second inserting member. Configurations of the plasmageneration unit 211, the insulating member 220, and the inserting member230 are substantially the same as or substantially similar to those ofthe plasma generation unit, the insulating member, and the insertingmember in the previous embodiment described above. Thus, their repeateddescription is not provided here.

The first injection unit 242 is formed to be coupled to the reactionspace 203. A first raw material gas, which flows from the supply unit(not illustrated), is changed into a radical form in the reaction space203, and transmitted to the first injection unit 242. Then, the firstraw material gas reacts with a deposition target at the first injectionunit 242, and thus, a deposition process is performed on a surface ofthe deposition target. The first injection unit 242 is coupled to thereaction space 203 by using a connection unit or connector 241. Theconnection unit 241 may have a narrower width than the injection unit242 and the reaction space 203.

The second injection unit 250 is formed to be adjacent to the reactionspace 242. Additionally, the second injection unit 250 may be separatedfrom the first injection unit 242. The second injection unit 250 injectsa second raw material, to be deposited on the substrate S, in adirection toward the substrate S. Though not illustrated, the secondinjection unit 250 is coupled to the supply unit (not illustrated) so asto be supplied with the second raw material. The second injection unit250 may be formed separately from the supply unit (not illustrated) forsupplying the first raw material that flows into the reaction space 203.

A deposition method of using the vapor deposition apparatus 200, in thecurrent embodiment, is briefly described.

When the substrate S, which is a deposition target, corresponds to thesecond injection unit 250 of the vapor deposition apparatus 200, thesecond injection unit 250 injects a second raw material, for example, asecond raw material in a gas state in a direction toward the substrateS.

Then, when the substrate 5, which is a deposition target, moves along anX direction shown in FIG. 4, that is, a direction of an arrow, and thus,corresponds to the first injection unit 242, a first raw material gasflows into the reaction space 203. Then, the substrate S and the vapordeposition apparatus 200 may relatively move with respect to each other,and a deposition process may be performed. That is, the substrate S maymove in an X direction as shown in FIG. 4, and then, a depositionprocess may be consecutively executed. Conversely, the vapor depositionapparatus 200 may move, and a deposition process may be performed.Additionally, the present invention is not limited thereto, and thesubstrate S may be fixed to the vapor deposition apparatus 200, and adeposition process may be executed.

Through the supply unit (not illustrated), a second raw material gas mayflow into the reaction space 203. Then, a plasma is generated within thereaction space 203 between the plasma generation unit 211 and thecorresponding surface 215. At least a portion of the raw material gases,which flows into the reaction space 203, is changed into a radical form.The raw material, changed into the radical form, reaches the substrate Svia the first injection unit 242. Resultantly, a deposition layer, whichcontains the first raw material and the second raw material, is formedon the substrate S. For example, a single-layered deposition layer,which contains the first raw material and the second raw material, maybe formed on the substrate S.

The insulating member 220 surrounds the plasma generation unit 211, andthus, generation of particles, which may be generated from a surface ofthe plasma generation unit 211, may be prevented. For example, theinserting member 230, such as an O-ring, is located between theinsulating member 220 and the plasma generation unit 211, so as toenclose a space between the insulating member 220 and the plasmageneration unit 211. Thus, ions and electrons, which are generated whena plasma is generated, may be completely prevented or substantiallyprevented from colliding with the plasma generation unit 211.

Additionally, the plasma generation unit 211 and the insulating member220 are separated from each other, and thus, generation of additionalparticles may be prevented or substantially prevented. That is, if theplasma generation unit 211 and the insulating member 220 contact eachother, heat generated from the plasma generation unit 211 may increasephonon in the insulating member 220, and thus, a relatively high heatmay be generated from the insulating member 220. Additionally, such highheat may cause generation of particles from a surface of the insulatingmember 220. However, in the current embodiment, the plasma generationunit 211 and the insulating member 220 are separated from each other.Therefore, transmission of the heat, generated from the plasmageneration unit 211, to the insulating member 220 may be effectivelyprevented, substantially prevented, or reduced.

As a result, the vapor deposition apparatus 200, in the currentembodiment, may easily form a relatively high-purity deposition layer bykeeping the inside of the reaction space 203 uncontaminated orsubstantially uncontaminated.

FIG. 5 is a schematic plan view illustrating a vapor depositionapparatus 300, according to another embodiment of the present invention.

Referring to FIG. 5, the vapor deposition apparatus 300 includes ahousing 301, a supply unit (not illustrated), a plasma generation unit(or plasma generator) 311, a reaction space 303, a corresponding surface315, an insulating member 320, a first injection unit (or firstinjector) 342, a second injection unit (or second injector) 350-1, and athird injection unit (or third injector) 350-2. Additionally, the vapordeposition apparatus 300 further includes exhaust units (or exhausts)370-1 through 370-4.

The housing 301 is formed of a durable material so as to maintain anentire shape and appearance of the vapor deposition apparatus 300.

The supply unit (not illustrated) is located in the housing 301. Forexample, the supply unit may be formed on an upper portion of thehousing 301, and may include shapes of a plurality of through holes, soas to supply a first raw material gases into the reaction space 303, andsupply a plurality of gases into the second injection unit 350-1 and thethird injection unit 350-2.

The plasma generation unit 311 is located inside the housing 301. Theplasma generation unit 311 may be an electrode to which a voltage isapplied. The corresponding surface 315 is a surface which corresponds tothe plasma generation unit 311. The reaction space 303 is defined as apredetermined space inside the housing 301. Specifically, the reactionspace 103 is a space between the corresponding surface 315 and theplasma generation unit 311. An insulating member 320 surrounds, but doesnot contact the plasma generation unit 311. To achieve this, aninserting member 330 is between the insulating member 320 and the plasmageneration unit 311. The inserting member 330 is formed of an elasticmaterial. The inserting member 330 may be an O-ring. Similar to theembodiment shown in FIGS. 1-3, the inserting member 330 may include afirst inserting member and a second inserting member. Configurations ofthe plasma generation unit 311, the insulating member 320, and theinserting member 330 are substantially the same as or substantiallysimilar to those of the plasma generation unit, the insulating member,and the inserting member in the previous embodiment described above.Thus, their repeated description is not provided here.

The first injection unit 342 is formed to be coupled to the reactionspace 303. That is, the response space 303 is between the supply unit(not illustrated) and the first injection unit 342. A first raw materialgas, which flows from the supply unit (not illustrated), is changed intoa radical form in the reaction space 303, and then, transmitted to thefirst injection unit 242. Then, the first raw material gas reacts with adeposition target at the first injection unit 342, and thus, adeposition process is executed on a surface of the deposition target.The first injection unit 342 is coupled to the reaction space 303 byusing a connection unit or connector 341. The connection unit 341 mayhave a narrower width than the injection unit 342 and the reaction space303.

The second injection unit 350-1 is formed to be adjacent to the firstinjection unit 342. Additionally, the second injection unit 350-1 may beseparated from the first injection unit 342. The second injection unit350-1 injects a purge gas into the substrate 5, in a direction towardthe substrate S. The purge gas includes an inert gas. Additionally, thepresent invention is not limited thereto, and the second injection unit350-1 may inject a second raw material, to be deposited on the substrate5, in a direction toward the substrate S. Though not illustrated, thesecond injection unit 350-1 is coupled to the supply unit (notillustrated) so as to be supplied with the purge gas or the second rawmaterial. The second injection unit 350-1 may be formed to be separatedfrom the supply unit (not illustrated) for supplying the first rawmaterial that flows into the reaction space 203.

The third injection unit 350-2 is formed to be adjacent to the firstinjection unit 342. Additionally, the third injection unit 350-2 may beseparated from the first injection unit 342. Specifically, the firstinjection unit 342 is between the second injection unit 350-1 and thethird injection unit 350-2.

The third injection unit 350-2 injects a purge gas into the substrate S,in a direction toward the substrate S. The purge gas includes an inertgas. Additionally, the present invention is not limited thereto, and thethird injection unit 350-2 may inject the second raw material, to bedeposited on the substrate S, in a direction toward the substrate S.Additionally, the second injection unit 350-1 may inject a third rawmaterial, to be deposited on the substrate S, in a direction toward thesubstrate S.

Additionally, the exhaust unit 370-2 is between the first injection unit342 and the second injection unit 350-1. The exhaust unit 370-3 isbetween the first injection unit 342 and the third injection unit 350-2.Additionally, the exhaust unit 370-1 and the exhaust unit 370-4 arerespectively adjacent to edges of the second injection unit 350-1 andthe third injection unit 350-2.

The exhaust units 370-1 through 370-4 are adjacent to the firstinjection unit 342, the second injection unit 350-1, and the thirdinjection unit 350-2. When a deposition process is performed via thefirst injection unit 342, the second injection unit 350-1, and the thirdinjection unit 350-2, the exhaust units 370-1 through 370-4 mayrelatively easily exhaust a remaining material, and thus,characteristics of a deposition layer may be improved.

The substrate S and the vapor deposition apparatus 300 may move withrespect to each other, and thus, a deposition process may be performed.That is, as illustrated in FIG. 5, the substrate S may move in an Xdirection, and thus, a deposition process may be consecutivelyperformed. Conversely, the vapor deposition apparatus 300 may move, andthus, a deposition process may be performed. Additionally, the presentinvention is not limited thereto, and the substrate S may be fixed tothe vapor deposition apparatus 100, and thus, a deposition process maybe performed.

Additionally, in the current embodiment, the second and third injectionunits 350-1 and 350-2, for injecting a purge gas, are included. Thus,when a deposition process is performed via the first injection unit 342,a foreign object or an impure gas may be easily prevented orsubstantially prevented from flowing into an area of a depositionprocess,

Additionally, the insulating member 320 surrounds the plasma generationunit 311, and thus, generation of particles, which may be generated froma surface of the plasma generation unit 311 due to acceleration ofelectrons, may be prevented or substantially prevented. For example, theinserting member 330, such as an O-ring, is located between theinsulating member 320 and the plasma generation unit 311, so as toenclose a space between the insulating member 320 and the plasmageneration unit 311. Thus, ions and electrons, which are generated whena plasma is generated, may be completely prevented or substantiallyprevented from colliding with the plasma generation unit 311.

Additionally, the plasma generation unit 311 and the insulating member320 are separated from each other, so as to prevent generation ofadditional particles. That is, if the plasma generation unit 311 and theinsulating member 320 contact each other, heat generated from the plasmageneration unit 311 may increase phonon in the insulating member 320,and thus, a relatively high heat may be generated from the insulatingmember 320. Additionally, such high heat may cause generation ofparticles from a surface of the insulating member 320. However, in thecurrent embodiment, the plasma generation unit 311 and the insulatingmember 320 are separated from each other. Thus, transmission of theheat, generated from the plasma generation unit 311, to the insulatingmember 320 is effectively prevented, substantially prevented, orreduced.

As a result, the vapor deposition apparatus 300, in the currentembodiment, may relatively easily form a high-purity deposition layer bykeeping the inside of the reaction space 303 uncontaminated orsubstantially uncontaminated.

FIG. 6 is a schematic plan view illustrating a vapor depositionapparatus, according to another embodiment of the present invention.

Referring to FIG. 6, the vapor deposition apparatus 400 includes aplurality of first regions 410-1 and 410-2, a plurality of secondregions 450-1 and 450-2, a plurality of purge units 460-1 through 460-4,and a plurality of exhaust units (or exhausts) 470-1 through 470-10.

The first regions 410-1 and 410-2 respectively include a housing 401, asupply unit (not illustrated), a plasma generation unit (or plasmagenerator) 411, a reaction space 403, an insulating member 420, and afirst injection unit (or first injector) 442.

The housing 401 may be formed of a durable material so as to maintain anentire shape and appearance of the vapor deposition apparatus 400, aswell as those of the first region 410-1.

That is, the housing 401 may be formed to respectively correspond to thefirst regions 410-1 and 410-2. However, the housing 401 may be formed tocorrespond to the vapor deposition apparatus 400.

The first regions 410-1 and 410-2 have the same configuration. Thus,only the configuration of the first region 410-1 will be described here.

The supply unit (not illustrated) is located in the housing 401. Forexample, the supply unit may be located on an upper portion of thehousing 401. The supply unit supplies a first raw material gas into thereaction space 403.

The plasma generation unit 411 is located inside the housing 401. Theplasma generation unit 411 may be an electrode to which a voltage isapplied. The corresponding surface 415 is a surface which corresponds tothe plasma generation unit 411. The reaction space 403 is defined as aspace (e.g., a predetermined space) inside the housing 401.Specifically, the reaction space 403 is a space between thecorresponding surface 415 and the plasma generation unit 411. Aninsulating member 420 surrounds, but does not contact the plasmageneration unit 411. To achieve this, an inserting member 430 is betweenthe insulating member 420 and the plasma generation unit 411. Theinserting member 430 is formed of an elastic material. The insertingmember 430 may be an O-ring. Similar to the embodiment shown in FIGS.1-3, the inserting member 430 includes a first inserting member and asecond inserting member. Configurations of the plasma generation unit411, the insulating member 420, and the inserting member 430 aresubstantially the same as or substantially similar to those of theplasma generation unit, the insulating member, and the inserting memberin the previous embodiments described above. Thus, their repeateddescription is not provided here.

The first injection unit 442 is formed to be coupled to the reactionspace 403. That is, the response space 403 is between the supply part(not illustrated) and the first injection unit 442. A first raw materialgas, which flows via the supply unit (not illustrated), is changed intoa radical form in the reaction space 403, and then, transmitted to thefirst injection unit 442. Then, the first raw material gas reacts with adeposition target at the first injection unit 442, and thus, adeposition process is performed on a surface of the deposition target.The first injection unit 442 is coupled to the reaction space 403 byusing a connection unit 441. The connection unit 441 may have a narrowerwidth than the injection unit 442 and the reaction space 403.

The plurality of second regions 450-1 and 450-2 are separated from thefirst regions 410-1 and 410-2. Additionally, the second regions 450-1and 450-2 respectively inject a second raw material into the substrateS, to be deposited on the substrate S, in a direction toward thesubstrate S.

The plurality of purge units 460-1 through 460-4 are located adjacentlywith respect to the first regions 410-1 and 410-2 and the second regions450-1 and 450-2.

Specifically, the purge unit 460-2 is located between the first region410-1 and the second region 450-1, the purge unit 460-3 is locatedbetween the first region 410-1 and the second region 450-2, and thepurge unit 460-4 is located between the first region 410-2 and thesecond region 450-2.

Additionally, the purge unit 460-1 are located adjacent to the secondregion 450-1. The plurality of purge units 460-1 through 460-4, whichcontain an inert gas, inject a purge gas in a direction of the substrateS.

Each of the plurality of exhaust units 470-1 through 470-10 are locatedrespectively adjacent to the plurality of first regions 410-1 and 410-2,the plurality of second regions 450-1 and 450-2, and the plurality ofpurge units 460-1 through 460-4.

That is, the plurality of exhaust units 470-1 through 470-10 arerespectively between the plurality of first regions 410-1 and 410-2, andthe plurality of second regions 450-1 and 450-2. FIG. 7 illustrates thetwo exhaust units 470-5 and 470-6 which are located between the firstregion 410-1 and the purge unit 460-3. However, the present invention isnot limited thereto, and one of the two exhaust units 470-5 and 470-6may not be provided.

A deposition method of using the vapor deposition apparatus 400, in thecurrent embodiment, is briefly described. As a specific example, amethod of forming AlxOy on the substrate by using the vapor depositionapparatus 400 is described.

When the substrate S, which is a deposition target, corresponds to thesecond region 450-1 of the vapor deposition apparatus 400, the secondregion 450-1 may inject a second raw material, for example, a gas whichcontains aluminum (Al), such as trimethyl aluminum (TMA) in a gas state,in a direction of the substrate S. Thus, an absorption layer, whichcontains Al, is formed on an upper surface of the substrate S.Specifically, a chemical absorption layer and a physical absorptionlayer are formed on the upper surface of the substrate S.

The physical absorption layer which has a weak molecular binding force,among absorption layers formed on the upper surface of the substrate S,is separated from the substrate S by using a purge gas, which isinjected by the purge unit 460-1 or the purge unit 460-2. Then, thephysical absorption layer is effectively removed from the substrate S bypumping the exhaust units 470-2 and 470-3. Thus, a purity of adeposition layer, to be formed on the substrate S, is eventuallyimproved.

Then, when the substrate 5, which is a deposition target, moves along anX direction shown in FIG. 6, that is, a direction of an arrow, and thuscorresponds to the first injection unit 442 in the first region 410-1 ofthe vapor deposition apparatus 400, a first raw material gas flows intothe reaction space 403. Specifically, the first raw material gascontains oxygen, for example, water (H₂O), oxygen (O₂), nitrous oxide(N₂O).

A plasma is generated from between the plasma generation unit 411 andthe corresponding surface 415 of the reaction space 403. At least a partof an oxygen in the raw material gases, which flows into the reactionspace 403, is changed into a radical form.

Ions and electrons, accelerating in the reaction space 403, may beprevented or substantially prevented from colliding with a surface ofthe plasma generation unit 411 by using the insulating member 420. As aresult, generation of particles, which may be generated from a surfaceof the plasma generation unit 411, is prevented or substantiallyprevented. For example, an inflow of particles from the surface of theplasma generation unit 411 through the inserting member 430 iscompletely prevented or substantially prevented. Additionally, theinsulating member 420 and the plasma generation unit 411 are separatedfrom each other, so as to effectively prevent, substantially prevent, orreduce heat, generated from the plasma generation unit 411, from beingtransmitted to the insulating member 420. Thus, damage on the insulatingmember 420 is prevented or substantially prevented, and for example,generation of particles, which may be generated from a surface of theinsulating member 400 due to an increase in phonon in the insulatingmember 420, is prevented or substantially prevented.

Thus, a high-purity material in a radical form may exist in the reactionspace 403. Such a material in a radical form reaches a surface of thesubstrate S, and thus, a desired deposition layer is formed.

That is, a first raw material gas in the radical form reacts with achemical absorption layer, formed of a second raw material which isalready absorbed in the substrate S, or substitutes a part of thechemical absorption layer. Thus, AlxOy, which is a desired depositionlayer, is formed on the substrate S. An excessive amount of the firstraw material forms the physical absorption layer, and remains on thesubstrate S.

A purge gas is injected from the purge unit 460-2 or 460-3 in adirection toward the substrate S. Thus, the physical absorption layer ofthe first raw material, which remains on the substrate S, is separatedfrom the substrate S and is effectively removed or substantially removedfrom the substrate S by pumping the exhaust unit 470-4 and 470-5.Therefore, a purity of a deposition layer, to be formed on the substrateS, is eventually improved.

As a result, a deposition layer, which contains the first raw materialand the second raw material, is formed on the substrate S. Specifically,a single atomic layer, which contains AlxOy, is formed on the substrateS.

Then, the substrate S sequentially moves to correspond to the secondregion 450-2 and the first region 410-2. Thus, a deposition layer may befurther formed sequentially as desired.

Then, the substrate S and the vapor deposition apparatus 400 may movewith respect to each other, and perform a deposition process. That is,as illustrated in FIG. 6, the substrate S may move in an X directionshown in FIG. 6, and thus, a deposition process may be consecutivelyperformed. Conversely, the vapor deposition apparatus 400 may move, andthus, a deposition process may be performed. The present invention isnot limited thereto, and a deposition process may also be performed whenthe substrate S is fixed to the vapor deposition apparatus 400.

The vapor deposition apparatus 400, in the current embodiment, mayeasily form a high-purity deposition layer by keeping the inside of thereaction space 403 uncontaminated or substantially uncontaminated.

FIG. 7 is a schematic cross-sectional view illustrating an organiclight-emitting display apparatus which is manufactured by using a methodof manufacturing an organic light-emitting display apparatus, accordingto an embodiment of the present invention. FIG. 8 is an extended view ofa portion F of FIG. 7.

Specifically, FIGS. 7 and 8 illustrate an organic light-emitting displayapparatus 10 which is manufactured by using one of the vapor depositionapparatuses 100 through 400, described above.

The organic light-emitting display apparatus 10 is formed on a substrate30. The substrate 30 may be formed of glass, plastic, or metal.

A buffer layer 31, which contains an insulating material, is formed onthe substrate 30, in order to prevent moisture or a foreign materialfrom penetrating into the substrate 30 and to provide a planarizationsurface on an upper portion of the substrate 30.

A thin-film transistor (TFT) 40, a capacitor 50, an organiclight-emitting device 60 are formed on the buffer layer 30. The TFT 40includes an active layer 41, a gate electrode 42, and source/drainelectrodes 43. The organic light-emitting device 60 includes a firstelectrode 61, a second electrode 62, and an intermediate layer 63.

The capacitor 50 includes a first capacitor electrode 51 and a secondcapacitor electrode 52.

Specifically, the active layer 41, formed to have a pattern (e.g., apredetermined pattern), is located on the buffer layer 31. The activelayer 41 may contain an inorganic semiconductor material such assilicon, an organic semiconductor material, or an oxide semiconductormaterial. The active layer 41 may be formed by injecting a p-type dopantor an n-type dopant. The first capacitor electrode 51 is formed on thesame layer as the active layer 41. The first capacitor electrode 51 maybe formed of the same material as the active layer 41.

A gate insulating layer 32 is formed on an upper portion of the activelayer 41. The gate electrode 42 is formed on an upper portion of thegate insulating layer 32, to correspond to the active layer 41. Aninterlayer insulating layer 33 is formed to cover the gate electrode 42.The source/drain electrodes 43 are formed on the interlayer insulatinglayer 33, so as to contact a predetermined area of the active layer 41.The second capacitor electrode 52 is formed on the same layer as thesource/drain electrodes 43. The second capacitor electrode 52 may beformed of the same material as the source/drain electrodes 43.

A passivation layer 34 is formed to cover the source/drain electrodes43. An additional insulating layer may be further formed on thepassivation layer 34 so as to planarize the TFT 40.

The first electrode 61 is formed on the passivation layer 34. The firstelectrode 61 is formed to be electrically coupled to either of thesource/drain electrodes 43. Additionally, a pixel-defining layer 35 isformed to cover the first electrode 61. A predetermined opening 64 isformed on the pixel-defining layer 35. Then, the intermediate layer 63,which includes an organic light-emitting layer, is formed within an areadefined by the opening 64. The second electrode 62 is formed on theintermediate layer 63.

An encapsulation layer 70 is formed on the second electrode 62. Theencapsulation layer 70 may contain an organic or inorganic material. Theencapsulation layer 70 may also be a structure in which an organicmaterial and an inorganic material are alternately stacked.

The encapsulation layer 70 may be formed by using one of the vapordeposition apparatuses described herein. That is, a desired layer may beformed on the substrate 30, on which the second electrode 62 is formed,by passing through the vapor deposition apparatus described herein.

For example, the encapsulation layer 70 may include an inorganic layer71 and an organic layer 72. The inorganic layer 71 includes a pluralityof layers 71 a through 71 c. The organic layer 72 includes a pluralityof layers 72 a through 72 c. The plurality of layers 71 a through 71 c,included in the inorganic layer 71, may be formed by using the vapordeposition apparatus according to the present invention.

However, the present invention is not limited thereto. That is, thebuffer layer 31, the gate insulating layer 32, the interlayer insulatinglayer 33, the passivation layer 34, the pixel-defining layer 35, andother insulating layers may be formed by using the vapor depositionapparatus in the present invention.

Additionally, the active layer 41, the gate electrode 42, thesource/drain electrodes 43, the first electrode 61, the intermediatelayer 63, the second electrode 62, and other various thin films may alsobe formed by using the vapor deposition apparatus in the presentinvention.

As describe above, when the vapor deposition apparatus in the presentinvention is used, characteristics of a deposition layer, formed on theorganic light-emitting display apparatus 10, may be improved.Resultantly, electrical and image quality characteristics of the organiclight-emitting display apparatus 10 may also be improved.

A vapor deposition apparatus, a deposition method of using the same, anda method of manufacturing an organic light-emitting display apparatusmay efficiently prevent or substantially prevent contamination of adeposition space, and improve characteristics of a deposition layer.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims, and theirequivalents.

What is claimed is:
 1. A method of forming a deposition layer on asubstrate using a vapor deposition apparatus, the method comprising:supplying a first raw material gas from a supply unit to a reactionspace; changing at least a portion of the first raw material gas into aradical form, by generating a plasma using a plasma generator in thereaction space; and injecting a first raw depositing material onto thesubstrate, the first raw depositing material comprising a radical form,wherein the changing of at least a portion of the first raw material gasinto a radical form comprises substantially preventing electrons orions, which are generated when the plasma is generated, fromaccelerating and colliding with the plasma generator using an insulatingmember separate from and surrounding the plasma generator, wherein theinsulating member is separated from the plasma generator by an O-ringbetween the plasma generator and the insulating member.
 2. The method ofclaim 1, wherein the substrate and the vapor deposition apparatus areconfigured to move with respect to each other and execute a depositionprocess.
 3. A method of manufacturing an organic light-emitting displayapparatus by using a vapor deposition apparatus, wherein the organiclight-emitting display apparatus comprises a first electrode, anintermediate layer which comprises an organic light-emitting layer, asecond electrode, and an encapsulation layer, wherein forming at leastone thin film of the organic light-emitting display apparatus comprises:positioning a substrate to correspond to the vapor deposition apparatus;supplying a first raw material gas from a supply unit of the vapordeposition apparatus to a reaction space; changing at least a portion ofthe first raw material gas into a radical form, by generating a plasmausing a plasma generator in the reaction space; and injecting a firstraw depositing material into the substrate, the first raw depositingmaterial comprising a radical form, wherein the changing at least aportion of the first raw material gas into a radical form comprisessubstantially preventing electrons or ions, which are generated when theplasma is generated, from accelerating and colliding with the plasmagenerator using an insulating member separated from and surrounding theplasma generator, wherein the insulating member is separated from theplasma generator by an O-ring between the plasma generator and theinsulating member.
 4. The method of claim 3, wherein the forming of thethin film of the organic light-emitting display comprises forming theencapsulation layer on the second electrode.
 5. The method of claim 3,wherein the forming of the thin film of the organic light-emittingdisplay comprises forming an insulating layer.
 6. The method of claim 3,wherein the forming of the thin film of the organic light-emittingdisplay comprises forming a conductive layer.